Advanced Resist Design Using AFM Analysis for ArF Lithography
نویسندگان
چکیده
منابع مشابه
Nanometer-Scale Patterning on PMMA Resist by Force Microscopy Lithography
Nanoscale science and technology has today mainly focused on the fabrication of nano devices. In this paper, we study the use of lithography process to build the desired nanostructures directly. Nanolithography on polymethylmethacrylate (PMMA) surface is carried out by using Atomic Force Microscope (AFM) equipped with silicon tip, in contact mode. The analysis of the results shows that the ...
متن کاملNovel Resist Materials for next Generation Lithography
........................................................................................................................................................ ii Acknowledgments ....................................................................................................................................... iii Publications............................................................................
متن کاملMetallic resist for phase-change lithography
Currently, the most widely used photoresists in optical lithography are organic-based resists. The major limitations of such resists include the photon accumulation severely affects the quality of photolithography patterns and the size of the pattern is constrained by the diffraction limit. Phase-change lithography, which uses semiconductor-based resists such as chalcogenide Ge₂Sb₂Te₅ films, wa...
متن کاملanalysis of ruin probability for insurance companies using markov chain
در این پایان نامه نشان داده ایم که چگونه می توان مدل ریسک بیمه ای اسپیرر اندرسون را به کمک زنجیره های مارکوف تعریف کرد. سپس به کمک روش های آنالیز ماتریسی احتمال برشکستگی ، میزان مازاد در هنگام برشکستگی و میزان کسری بودجه در زمان وقوع برشکستگی را محاسبه کرده ایم. هدف ما در این پایان نامه بسیار محاسباتی و کاربردی تر از روش های است که در گذشته برای محاسبه این احتمال ارائه شده است. در ابتدا ما نشا...
15 صفحه اولElectron beam lithography on irregular surfaces using an evaporated resist.
An electron beam resist is typically applied by spin-coating, which cannot be reliably applied on nonplanar, irregular, or fragile substrates. Here we demonstrate that the popular negative electron beam resist polystyrene can be coated by thermal evaporation. A high resolution of 30 nm half-pitch was achieved using the evaporated resist. As a proof of concept of patterning on irregular surfaces...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of Photopolymer Science and Technology
سال: 2003
ISSN: 0914-9244,1349-6336
DOI: 10.2494/photopolymer.16.467